▎ 摘　　要

NOVELTY - A boron-doped graphene is prepared by reacting reactive metal with low-carbon halohydrocarbon and boron source in reactor under protection of inert gas to respectively generate carbon and boron and assembling into in-situ boron-doped graphene. The prepared graphene is purified to prepare substrate-free in-situ boron-doped graphene. USE - Method for preparation of boron-doped graphene (claimed) used in copper indium gallium selenide, cadmium telluride and dye sensitization solar batteries, panel display, supercapacitor, field-emission material, and lithium ion battery. ADVANTAGE - The method is simple in operation, safe and nontoxic as compared with conventional preparation of graphene. It has low cost, and obtains graphene having fewer defects, excellent conductivity and high quality.