▎ 摘　　要

NOVELTY - The device has a dielectric structure whose first contact region and second contact region are configured so as to adjust electrical characteristics of a two-dimensional material e.g. graphene, in first contact surface and/or second contact surface of a graphene layer (104) such that the electrical characteristics of the two-dimensional material in the first contact surface and the second contact surface of the layer are different from the electrical characteristics of a two-dimensional material in a device surface of the layer. USE - Electronic device e.g. passive element and active element. Uses include but are not limited to an electric resistor, transistor such as bipolar transistor and FET, sensor such as gas sensor and magnetic sensor, filter, transmitter, receiver, capacitor, diode, thyristor and a transceiver. ADVANTAGE - The electrical characteristics of the two-dimensional material in the first contact surface and the second contact surface of the layer are different from the electrical characteristics of the two-dimensional material in the device surface of the layer, thus improving electronic and material properties of the device with better switching frequency and energy efficiency and enhancing sensitivity and long-term stability of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a switching circuit of an electrical contacted layer. Thin film resistor (R-s) Transition resistor (Rho-s) Dielectric carrier element (102) Graphene layer (104) Electrodes (106)