▎ 摘　　要

NOVELTY - The method for preparing nanowire-shaped organic single crystal domain, involves (S1) cutting the copper-based graphene into desired size, spin-coating the surface of copper-based graphene with poly(methyl methacrylate) to thickness of 2-5 micron using spin coater, carrying out wet transfer method to form copper-based graphene, transferring the graphene to silicon wafer substrate, (S2) immersing silicon wafer substrate in acetone for 5 minutes, removing and drying to obtain graphene substrate with poly(methyl methacrylate) residue, (S3) placing the graphene substrate with poly(methyl methacrylate) residue in tubular heating furnace, annealing at high temperature, heating at 500 degrees C for 1 hour, cooling to room temperature in a heating furnace to obtain clean graphene substrate, (S4) loading the clean graphene substrate into high vacuum chamber, preparing pentacene molecular film by thermal deposition to deposit a pentacene molecular film onto the surface of the clean graphene substrate. USE - Method for preparing nanowire-shaped organic single crystal domain used for lateral transmission of carriers in organic semiconductor device and organic field-effect device. ADVANTAGE - The method enables controllable preparation of nanowire-shaped organic single crystal domain with width of 30 nm and length of 3-5 mu m. DETAILED DESCRIPTION - The copper-based graphene is single-layer graphene prepared on a copper foil substrate by chemical vapor deposition, and the silicon wafer substrate is single crystal silicon substrate with oxide layer.