▎ 摘　　要

NOVELTY - The memory device comprises graphene switching devices having a source electrode, a drain electrode and a gate electrode and including a Schottky barrier between the drain electrode and a channel in a direction from the source electrode toward the drain electrode, word lines, bit lines, source lines, a conductive semiconductor substrate (310), a semi-metal layer, a gate oxide layer (360) provided on the semi-metal layer, grooves provided on a surface of the substrate, an insulating material filling the grooves, and an organic layer provided between the metal bumps and the semi-metal layer. USE - Memory device including graphene switching devices having a FET structure. ADVANTAGE - The memory device can store data without an additional storage element, and can be operated in less consumption of power. DETAILED DESCRIPTION - The memory device comprises graphene switching devices having a source electrode, a drain electrode and a gate electrode and including a Schottky barrier between the drain electrode and a channel in a direction from the source electrode toward the drain electrode, word lines, bit lines, source lines, a conductive semiconductor substrate (310), a semi-metal layer, a gate oxide layer (360) provided on the semi-metal layer, grooves provided on a surface of the substrate, an insulating material filling the grooves, and an organic layer provided between the metal bumps and the semi-metal layer. The graphene switching devices are arranged in rows and columns. Each of the word lines is connected to gate electrode of graphene switching devices on a corresponding column. Each of the bit lines is connected to drain electrodes of graphene switching devices on a corresponding row. Each of the source lines is connected to source electrodes of graphene switching devices on a corresponding column. The drain electrode is provided on a first region of the substrate, and an insulating layer is provided on a second region of the substrate, where the first and second regions are spaced apart from each other. The semi-metal layer is provided on the substrate between the drain electrode and the insulating layer, extends onto the insulating layer, is configured to function as the channel, and is a graphene layer or a metal carbon nanotube mesh. The source electrode is provided on the semi-metal layer. The gate electrode is provided on the gate oxide layer. The substrate forms the Schottky barrier between the semi-metal layer and the drain electrode. The drain electrode is spaced apart from the semi-metal layer. A distance between the semi-metal layer and the drain electrode is 1-30 nm. The graphene layer has a multi-layer structure including graphene layers. The drain electrode and the source electrode are formed of a metal or polysilicon. A height of the Schottky barrier varies according to a voltage applied to the gate electrode. The graphene switching device further comprises metal bumps provided on the substrate between the first region and the second region. The grooves correspond to the metal bumps. The metal bumps are surrounded by the insulating material, and upper surfaces of the metal bumps contact the semi-metal layer. The metal bumps are provided on the insulating material, and have top surfaces that contact the semi-metal layer. The organic layer has a thickness of 1-3 nm. The metal bumps have a size of 1-10 nm. The metal bumps are arranged at intervals of 10-30 nm. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a graphene switching device. Semiconductor substrate (310) First well (311) First electrode (321) Second electrode (322) Gate oxide layer. (360)