▎ 摘　　要

NOVELTY - The miniature ultra-wide band photoelectric detector based on graphite alkene-carbon nanotube composite film, has a stress layer (3) formed on a monocrystalline silicon substrate (1), a gate electrode (4) formed on the silicon substrate and the stress layer, a dielectric layer (5) formed on the gate electrode and the stress layer, a graphene layer (6) formed on the stress layer and the dielectric layer, drain electrode (7) and a source electrode (8) which are formed on the silicon substrate, where a graphene layer is parallel with the gate electrode. The drain electrode and the source electrode are parallel to and equidistant from the gate electrode. A carbon nano tube layer (9) form a heterojunction. The stress layer enables the heterojunction to be self-assembled into a micro-tube type three-dimensional structure. USE - Micro ultra-wideband photoelectric detector based on graphene-carbon nano-tube composite film used in field of space exploration, military reconnaissance and national life. ADVANTAGE - The three-dimensional micro-tubular structure provides a natural optical resonant cavity, which can obviously enhance the internal light field. The area of the graphene/carbon nano-tube composite photosensitive film-light reaction area in the unit incident light area is greatly increased. It greatly improves absorptivity of photosensitive films to light. The micro ultra-wideband photoelectric detector with high response degree, large bandwidth, fast speed and excellent photoelectric performance is realized under the room temperature condition. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing micro ultra-wideband photoelectric detector based on graphene-carbon nano-tube composite film, which involves cleaning a silicon wafer and preparing a sacrificial layer, putting the p-type monocrystalline silicon wafer into a mixed solution of hydrogen peroxide and sulfuric acid with the ratio of 1:4, boiling the silicon wafer for 15 minutes at 85℃, removing surface stains, washing with deionized water and drying, preparing a sacrificial layer, preparing a sacrificial layer on a silicon wafer by utilizing a photoetching patterning technology, a metal magnetron sputtering technology and a stripping technology, wherein the thickness of the sacrificial layer is 10 nm-200 nm, silicon nitride is respectively deposited on the prepared sacrificial layer by adopting a plasma enhanced chemical vapor deposition (PECVD) method, forming a patterned photoresist mask layer, dry etching the non-photoresist covering portion by adopting an inductive coupling plasma etching method, finally, washing the photoresist with acetone to finish the graphical preparation of the stress layer, preparing a gate electrode, firstly, patterning by using a negative photoresist photoetching process, then respectively sputtering an adhesion layer material and a conductive layer material on a stress layer by adopting a film deposition process such as a magnetron sputtering process, a thermal evaporation process or an electron beam evaporation process, and finally stripping the pattern of an invalid area by adopting a stripping process so as to finish the patterned preparation of a gate electrode, depositing a dielectric layer using plasma enhanced chemical vapor deposition or atomic layer deposition r other thin film process technology, then obtaining a required pattern by using a photoetching patterning technology, then performing dry etching on the part without the photoresist coverage by using an inductive coupling type plasma etching method, and finally, leaving a dielectric layer pattern by using a photoresist removing process to finish the patterning preparation of the dielectric layer, transferring the graphene layer on the p-type monocrystalline silicon wafer, etching the graphene layer without the photoresist coverage by adopting a photoetching patterning technology and using the photoresist as a barrier layer and an oxygen plasma etching technology, cleaning the photoresist on the surface of the graphene layer by using acetone to complete the transfer and the patterning of the graphene layer, preparing a source electrode and a drain electrode, firstly, photoetching is carried out to complete graphical design, then an electron beam evaporation process or a thermal evaporation process is adopted to deposit an adhesion layer metal material and a conducting layer metal material, finally, a stripping process is used to remove photoresist and the metal material attached to the surface of the photoresist, a silicon wafer is cleaned, and graphical preparation of a drain electrode and a source electrode is completed, preparing a carbon nano tube suspension by methods of ultrasound, centrifugation, dripping and coating the carbon nano tube suspension liquid on the device, and drying to finish the preparation of the carbon nano tube layer, etching the sacrificial layer by using an etching liquid, the gate electrode, the dielectric layer, the graphene layer, the drain electrode, the source electrode and the carbon nanotube layer form a heterojunction, the stress layer enables the heterojunction to be self-assembled into a micro-tube type three-dimensional structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a micro ultra-wideband photoelectric detector based on graphene-carbon nano-tube composite film. 1Monocrystalline silicon substrate 3stress layer 4Gate electrode 6Graphene layer 7Drain electrode 8Source electrode 9Carbon nano tube layer