• 专利标题:   Preparation of two-dimensional, nano-sized structure e.g. graphene sheets by chemical vapor deposition, comprises directing stream of building material into first surface of target plate to enable nano-sized structure to develop on surface.
  • 专利号:   US2003129305-A1
  • 发明人:   WU Y, CHONG T C
  • 专利权人:   WU Y, CHONG T C
  • 国际专利分类:   C23C016/00
  • 专利详细信息:   US2003129305-A1 10 Jul 2003 C23C-016/00 200360 Pages: 12 English
  • 申请详细信息:   US2003129305-A1 US124188 16 Apr 2002
  • 优先权号:   SG000085

▎ 摘  要

NOVELTY - Preparation of two-dimensional, nano-sized structure through chemical vapor deposition, comprises directing stream of building material into first surface of target plate (4) for appropriate period of time to enable nano-sized structure to develop on surface. The target plate comprises first surface and second surface on the opposite side. USE - For preparing two-dimensional, nano-sized structure, e.g. planar graphene sheets or nanowalls of other materials. ADVANTAGE - The method enables electrical contact to the substrate surface to reduce the non-uniformity of the charge distribution and total amount of charges, thus leading to reduction of the traverse component of the electrical field. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a chemical vapor deposition apparatus for the preparation of two-dimensional nano-sized structures comprising: growth chamber having target plate with first surface for receiving stream of building material and second surface on the opposite side; and power supply mechanism for establishing electric field on or immediately above first surface of target plate. DESCRIPTION OF DRAWING(S) - The figure is a schematic view of the chemical vapor deposition apparatus for growing carbon nanotubes and carbon nanowalls. First electrode (2) Second electrode (3) Target plate (4) Gas inlet (6) Pumping outlet to pump (7)