▎ 摘　　要

NOVELTY - Preparing graphene carbon nanotube composite film comprises using electrochemical deposition method to obtain graphene film on the surface of the metal substrate, preparing carbon nanotube film on the surface of the graphene film facing away from the metal substrate using chemical vapor deposition method, removing the metal substrate using remover, cleaning, and obtaining graphene carbon nanotube composite film. USE - The graphene carbon nanotube composite film is useful in thin film transistors. ADVANTAGE - The composite film has good conductive performance, and replaces traditional indium tin oxide (ITO) material. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) graphene-carbon nanotube composite film; and (2) thin film transistor array, comprising substrate and gate metal layer, gate insulating layer, amorphous silicon active layer, ohmic contact layer and source/drain metal layer sequentially prepared on the surface of the substrate, passivation layer and graphene carbon nano-tube composite film layer. The graphene carbon nano-tube composite film layer at least partially passes through the passivation layer and is connected with the source-drain metal layer. The graphene-carbon nano-tube composite film layer is the graphene-carbon nano-tube composite film. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the method for preparing graphene carbon nanotube composite film (Drawing includes non-English language text).