▎ 摘　　要

NOVELTY - The structure has a graphene layer (851) formed between a non-metallic material layer and a metal layer. The graphene layer connects the non-metallic material layer and the metal layer. An interfacial bonding layer is formed between the non-metallic material layer and the graphene layer, or the metal layer and the graphene layer. A bonding layer (841, 843, 844) is formed with metallic material, where the non-metallic material layer is one of a semiconductor substrate (801) and a semiconductor material layer on the substrate. USE - Hybrid interconnect structure for use in an electronic device. ADVANTAGE - The structure reduces specific resistance by inserting graphene between actual wiring structures of a multi-stack structure. The structure reduces resistance of the bonding layer and the metal layer, thus reducing total resistance of the structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a semiconductor device as an electronic device employing a hybrid interconnect structure. Semiconductor substrate (801) Bonding layers (841, 843, 844) Graphene layer (851) Spacer (870) Insulating layer (880)