▎ 摘　　要

NOVELTY - Growing gallium nitride with silicon graphene using magnetron sputtering of aluminum nitride involves using chemical vapor deposition method and growing graphene on metal substrate. The obtained product is placed in mixed solution of 2M of hydrochloric acid and 1M of ferric chloride for 12 hours. After the removal of the metal monolayer graphene substrate is transferred onto the silicon substrate and cover the resulting graphene silicon substrate. The obtained product is placed magnetron sputtering system and reaction chamber pressure is 1 pascal. USE - Method for growing gallium nitride with silicon graphene using magnetron sputtering of aluminum nitride (claimed). ADVANTAGE - The method enables to grow gallium nitride with silicon graphene using magnetron sputtering of aluminum nitride method is easy to obtain better quality final product. DETAILED DESCRIPTION - Growing gallium nitride with silicon graphene using magnetron sputtering of aluminum nitride involves using chemical vapor deposition method and growing graphene on metal substrate. The obtained product is placed in mixed solution of 2M of hydrochloric acid and 1M of ferric chloride for 12 hours. After the removal of the metal monolayer graphene substrate is transferred onto the silicon substrate and cover the resulting graphene silicon substrate. The obtained product is placed magnetron sputtering system and reaction chamber pressure is 1 pascal. The nitrogen gas and argon gas are applied for 5 minutes. 5N purity aluminum used as a target, and RF magnetron sputtering is performed. Sputtering aluminum nitride on silicon substrate and covered with graphene to obtain aluminum nitride and substrate. Sputtering aluminum nitride and substrate are subjected to metal organic chemical vapor deposition reaction chamber. The gas mixture of hydrogen and ammonia are applied for 5 minutes. The reaction chamber is heated to 600 degrees C for 20 minutes to obtain substrate. The reaction chamber pressure is maintained at 40 torr and temperature is raised to 650 degrees C. The hydrogen, ammonia and aluminum gas are introduced. The low temperature growth aluminum nitride buffer layer is 7nm. Again hydrogen, ammonia and aluminum gas are applied and temperature is raised to 1050 degrees C. The pulsed metal organic chemical vapor deposition growth method (MOCVD) method is used to obtain an aluminum nitride substrate. The reaction chamber pressure is reduced to 20 torr and temperature is dropped to 1000 degrees C. The hydrogen, ammonia and gallium sources are introduced. The gallium nitride epitaxial layer is grown on aluminum substrate by by chemical vapor deposition method to give gallium nitride substrate. The reaction chamber temperature is reduced to room temperature, after the sample is taken out to obtain final product.