▎ 摘　　要

NOVELTY - The method involves reacting the first graphene template with a silicon source to produce a first silicon carbide structure of a first doping type. The second graphene template is reacted with the silicon source in the laterally adjacent portion of the first silicon carbide structure to produce a second doped silicon carbide structure, and the first graphene template and the second graphene template are complementary to each other in one of the partial region of the same plane. A first graphene template is prepared or transferred on a substrate. USE - Method for growing laterally doped silicon carbide structure. ADVANTAGE - The method can prepare atomic layer thickness low-dimensional silicon carbide semiconductor material with lateral PN structure. The method is simple, easy to implement, easy to be popularized, and has good popularization and application prospects. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for growing a laterally doped silicon carbide structure. (Drawing includes non-English language text) Step for cleaning the silicon carbide substrate (A) Step for preparing p-type graphene template on the crystal face of a silicon carbide substrate (B) Step for reacting the silicon source gas with the graphene material of the p-type graphene template on the silicon carbide substrate (C) Step for removing the silicon structure accompanying the growth during the p-type silicon carbide structure on the silicon carbide substrate between the graphene templates, and leaving the p-type silicon carbide structure (D) Step for preparing a second graphene template on the epitaxial crystal surface of the silicon carbide substrate (E)