• 专利标题:   Graphene bending position and work function adjusting-type transistor, has regulating circuit whose portion is contained with magnetic particle to regulate electrostatic level, where magnetic particle controls height of schottky obstacle.
  • 专利号:   KR2016003541-U
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   H01L029/16, H01L029/43, H01L029/47, H01L029/66, H01L029/78, H01L029/812
  • 专利详细信息:   KR2016003541-U 12 Oct 2016 H01L-029/16 201674 Pages: 45
  • 申请详细信息:   KR2016003541-U KR005289 08 Sep 2016
  • 优先权号:   KR162339, KR005289

▎ 摘  要

NOVELTY - The transistor has a transistor body whose middle part is contained with graphene. A lower end portion of an obstacle regulating circuit is contained with piezo electric magnetic particle to regulate electrostatic level. The piezo electric magnetic particle controls work function and height of schottky obstacle. USE - Graphene bending position and work function adjusting-type transistor. ADVANTAGE - The transistor ensures better elasticity and flexibility of a structure so as to reduce production cost, working burden and size of the transistor, improve mobility of an electron, solve stand-by power problem, increase electronic speed, determine static electrical level of an obstacle control tolerant intersection circuit and control height of the schottky obstacle.