▎ 摘　　要

NOVELTY - Producing graphene grown substrate, comprises (a) placing a metal layer on a substrate, (b) performing metal organic chemical vapor deposition (MOCVD) by supplying an etching gas and a carbon-containing gas, and (c) growing graphene on the metal layer by supplying carbon-containing gas to the supplied etching gas. The step (c) is carried out by continuously performing MOCVD to remove the metal of the metal layer by the etching gas, and growing graphene on the substrate which does not contain the metal layer. USE - The method is useful for producing electronic component having graphene grown substrate (all claimed). DETAILED DESCRIPTION - Producing graphene grown substrate, comprises either: (a) placing a metal layer (200) on a substrate (100), (b) performing MOCVD by supplying an etching gas (310) and a carbon-containing gas (300), and (c) growing graphene (500) on the metal layer by supplying carbon-containing gas to the supplied etching gas; (a1) forming the metal layer on the substrate by loading the substrate into a deposition chamber, and (b1) forming graphene grown substrate by MOCVD by supplying etching gas and carbon-containing gas into the substrate loaded MOCVD chamber; (a2) forming the metal layer on the substrate by loading the substrate into a deposition chamber, and (b2) selectively etching the metal layer formed on the substrate by sequentially loading into the chamber for performing selective etching of the substrate, and (c2) forming graphene grown substrate by MOCVD by supplying etching gas and carbon-containing gas into the substrate loaded MOCVD chamber; (a3) performing chemical mechanical polishing (CMP) process on the metal layer formed on the substrate by loading the substrate into a CMP chamber, and (b3) forming graphene grown substrate by MOCVD by supplying etching gas and carbon-containing gas into the substrate loaded MOCVD chamber; (a4) forming the metal layer on the substrate by loading the substrate into a deposition chamber, (b4) performing chemical mechanical polishing CMP process on the metal layer formed on the substrate by loading the substrate into the CMP chamber, and (c4) forming graphene grown substrate by MOCVD by supplying etching gas and carbon-containing gas into the substrate loaded MOCVD chamber; (a5) forming the metal layer having thickness gradient on the substrate, (b5) configuring high concentration of etching gas at the elevated region of the metal layer to remove the metal quickly, and low concentration of etching gas at the lower region of the metal layer, (c5) configuring uniform concentration distribution of the carbon-containing gas according to the metal layer, (d5) performing MOCVD, (e5) maintaining low concentration and mobility of the etching gas at the lower region of the metal layer which is the starting point of the growth of graphene to remove the metal quickly, (f5) growing crystal structure of graphene of already finished growing by continuing etching while maintaining the MOCVD, (g5) growing graphene from the lower region of the metal layer to the higher region of the metal layer, and (h5) removing the metal layer, and directly exposing graphene to the surface of the substrate; (a6) forming the metal layer having thickness gradient on the substrate, (b6) configuring high concentration of etching gas at the elevated region of the metal layer to remove the metal quickly, and low concentration of etching gas at the lower region of the metal layer, (c6) increasing the concentration of carbon-containing gas in the lower region of the metal layer, (d6) performing MOCVD, (e6) maintaining low concentration and mobility of the etching gas at the lower region of the metal layer which is the starting point of the growth of graphene to remove the metal quickly, (f6) growing crystal structure of graphene of already finished growing by continuing etching while maintaining the MOCVD, (g6) growing graphene from the lower region of the metal layer to the higher region of the metal layer, and (h6) removing the metal layer, and directly exposing graphene to the surface of the substrate; or (a7) forming the metal layer having thickness gradient on the substrate, (b7) uniformly distributing the etching gas to remove the metal layer, (c7) increasing the concentration of carbon-containing gas in the lower region of the metal layer, (d7) performing MOCVD, (e7) maintaining low concentration and mobility of the etching gas at the lower region of the metal layer which is the starting point of the growth of graphene to remove the metal quickly, (f7) growing crystal structure of graphene of already finished growing by continuing etching while maintaining the MOCVD, (g7) growing graphene from the lower region of the metal layer to the higher region of the metal layer, and (h7) removing the metal layer, and directly exposing graphene to the surface of the substrate. The step (c) is carried out by continuously performing metal organic chemical vapor deposition to remove the metal of the metal layer by the etching gas, and growing graphene on the substrate which does not contain the metal layer. The substrate is loaded into the deposition chamber and MOCVD chamber sequentially using a load-locked chamber. INDEPENDENT CLAIMS are also included for: (1) graphene grown substrate comprising graphene grown on the surface of the substrate with direct contact with the substrate. The graphene grown on the surface of the substrate in first parallel direction has larger grain diameter than the other directions, preferably perpendicular direction, and crystal grain diameter in accordance with the first parallel direction on the surface, and second parallel direction on the surface. The graphene grown on the surface of the substrate is single crystal according to the inner region surrounded by the grain boundaries; (2) producing electronic component, comprising producing graphene grown substrate by the above method; (3) electronic component produced by the above method; and (4) electronic component comprising the graphene grown substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of producing graphene grown substrate. Substrate (100) Metal layer (200) Carbon-containing gas (300) Substrate (310) Graphene (500)