▎ 摘　　要

NOVELTY - The detector has a bottom passivation layer formed on a silicon substrate layer and a metal reflecting layer. A graphene thin film layer is formed on a top surface of a microbridge supporting layer. An end of an electrode layer is fixed with the bottom passivation layer and a bridge legs passivation layer. A metal pattern layer is formed on the graphene thin film layer. The metal reflecting layer, a composite dielectric layer and the metal pattern layer are arranged together to form a meta-material structure. Thickness of the graphene film layer is about 0.3-10nm. USE - Graphene terahertz detector. ADVANTAGE - The detector has high response rate, and improves terahertz radiation absorption rate. DETAILED DESCRIPTION - Thickness of the metal pattern layer is about 0.05-0.5 microns. Thickness of the bottom passivation layer is about 0.02-1 microns. Thickness of the metal reflective layer is about 0.05-0.5 microns. Thickness of the electrode layer is about 0.02-1 microns. An INDEPENDENT CLAIM is also included for a graphite terahertz detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of a graphene terahertz detector. '(Drawing includes non-English language text)'