• 专利标题:   Photodetector for converting photon energy of light into electrical signal, has ferroelectric polymer layer that has internal electric field that extends into graphene layer to facilitate transport of photoinduced carrier holes.
  • 专利号:   WO2022086449-A1
  • 发明人:   OEZYILMAZ B, TOH C T, YANG Q
  • 专利权人:   UNIV SINGAPORE NAT
  • 国际专利分类:   B82Y030/00, H01L031/028, H01L031/0352, H01L031/102, H01L051/46
  • 专利详细信息:   WO2022086449-A1 28 Apr 2022 H01L-031/028 202243 Pages: 24 English
  • 申请详细信息:   WO2022086449-A1 WOSG050638 21 Oct 2021
  • 优先权号:   SG10010481

▎ 摘  要

NOVELTY - The photodetector (100) comprises a graphene layer (104) that is formed on a substrate (102). A photoactive structure (106) includes quantum dots (106B) and a ferroelectric polymer layer (106A), formed on the graphene layer, and configured to generate carrier holes when illuminated. The ferroelectric polymer layer has an internal electric field that extends into the graphene layer to facilitate transport of photoinduced carrier holes from the photoactive structure into the graphene layer, in which the internal electric field is generated by a polarization of the ferroelectric polymer layer. The quantum dots of the photoactive structure are formed as a layer on the graphene layer, and the ferroelectric polymer layer of the photoactive structure is formed on the layer of the quantum dots. USE - Photodetector for converting photon energy of light into electrical signal. Uses include but are not limited to optical communication, thermal imaging, biometric system and surveillance security system. ADVANTAGE - The photo-response of the photodetector is improved significantly through the use of a ferroelectric polymer layer that defines an internal electric field to facilitate the transport of holes from the quantum dots to the graphene layer. The sensibility and reliability of the photo-detector are improved as polarization of the ferromagnetic polymer layer is controllable to allow for tuning of the Fermi level of the graphene towards an optimum Dirac point to enhance carrier mobility in the graphene layers. The ON/OFF state of the photosensor can be easily controlled by changing the orientation of the internal electric fields of the polymer layer. A fully dry fabrication process is utilized to form the photodiode that is the photodetector that is formed without using a traditional chemical etching method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of fabricating a photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of a photodetector. Photodetector (100) Substrate (102) Graphene layer (104) Photoactive structure (106) Ferroelectric polymer layer (106A) Quantum dots (106B)