• 专利标题:   Semiconductor device assembly with improved thermal performance, has thermally conductive material layer thermally conducting heat generated by semiconductor device laterally outward toward outer surfaces of encapsulant material.
  • 专利号:   US2021407964-A1, CN113838814-A, US11211364-B1
  • 发明人:   QU X, CHUN H, QUAN X
  • 专利权人:   MICRON TECHNOLOGY INC, MICRON TECHNOLOGY INC
  • 国际专利分类:   H01L021/56, H01L025/00, H01L023/373, H01L023/31, H01L025/065, H01L021/50, H01L023/367, H01L029/40
  • 专利详细信息:   US2021407964-A1 30 Dec 2021 H01L-025/065 202203 English
  • 申请详细信息:   US2021407964-A1 US939449 27 Jul 2020
  • 优先权号:   US043685P, US939449

▎ 摘  要

NOVELTY - The assembly (100) has a first and second semiconductor devices arranged over a package substrate (101). An encapsulated material partially encapsulating the substrate, the first and the second devices, and having outer surface(s) parallel to the vertical direction. A layer of thermally conductive material arranged between the two devices. The layer thermally conducts the heat generated by the first device laterally outward toward the one or more outer surfaces of the encapsulates. The thermally-conductive material comprises graphene, graphite, and/or carbon nanotubes. USE - Semiconductor device assembly with improved thermal performance. ADVANTAGE - The method enables providing the semiconductor device assembly with improved thermal performance in an efficient manner. The method allows the heat dissipating structures such as lids or heat sinks to be provided over semiconductor dies to assist with heat exchange between the package and an environment in which the package is operated. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for making a semiconductor device assembly. DESCRIPTION OF DRAWING(S) - The drawing shows a simplified schematic cross-sectional view of a semiconductor device assembly. Semiconductor device assembly (100) Package substrate (101) First semiconductor die (102) Second semiconductor die (103) Film (106)