• 专利标题:   Preparing photovoltaic device based on graphene nano-belt/single-wall carbon nanotube intramolecular heterojunction comprises e.g. preparing anode and cathode on both ends of graphene nano-belt/single-walled carbon nanotube intramolecular heterojunction layer respectively.
  • 专利号:   CN114203921-A, CN114203921-B
  • 发明人:   WANG L, GAO S, HE Z, SHI F, ZHOU Q, CHEN C
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B032/159, C01B032/174, C01B032/184, H01L051/42, H01L051/46, H01L051/48
  • 专利详细信息:   CN114203921-A 18 Mar 2022 H01L-051/48 202256 Chinese
  • 申请详细信息:   CN114203921-A CN10094258 26 Jan 2022
  • 优先权号:   CN11311019

▎ 摘  要

NOVELTY - Preparing photovoltaic device based on graphene nano-belt/single-wall carbon nanotube intramolecular heterojunction comprises preparing graphene nano-belt/single-walled carbon nanotubes intramolecular heterojunction layers on substrates with oxide insulating layers, and preparing anode and cathode on both ends of the graphene nano-belt/single-walled carbon nanotube intramolecular heterojunction layer respectively. USE - The method is useful for preparing photovoltaic device based on graphene nano-belt/single-wall carbon nanotube intramolecular heterojunction. ADVANTAGE - The method: provides photovoltaic device with high absorption and conversion efficiency of photon, and excellent intrinsic power conversion efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a photovoltaic device based on graphene nano-belt/single-wall carbon nanotube intramolecular heterojunction prepared by above mentioned method.