▎ 摘　　要

NOVELTY - The semiconductor device has a contact layer (102) that is formed on a semiconductor substrate (101). A protective layer (109) is formed on a wire layer that is disposed on the contact layer. Graphene wires (108A,108C) are provided within each catalyst film (107A,107B) formed in the trenches of the wire layer. The catalyst film includes metal selected from a group including nickel, cobalt, iron, ruthenium, and titanium, or alloy. USE - Semiconductor device for LSI. ADVANTAGE - Graphene is easily grown even though inclination of plus or minus 15 degrees exists from angles of 35 degrees and 55 degrees as center angle. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the semiconductor device. Semiconductor substrate (101) Contact layer (102) Catalyst film (107A,107B) Graphene wires (108A,108C) Protective layer (109)