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  • 专利标题:   Graphene device e.g. graphene-based inverter has electrodes and graphene channel which are formed on upper oxide layer formed on embedded gate.
  • 专利号:   US2011089995-A1, JP2011086937-A, KR2011041791-A, US8101980-B2, JP2015156500-A, KR1694877-B1, JP6121471-B2, JP2017112386-A, JP6275890-B2
  • 发明人:   HEO J S, SEO S, KIM D, WOO Y, CHUNG H, JEONG H J, KIM T C, SEO S A, U Y S, CHUNG H J, KIM D C, WOO Y S, HEO J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/335, H01L029/775, H03K003/01, H01L021/20, H01L029/06, H01L029/786, B82B003/00, H01L029/78, H01L021/00, H01L021/78, H01L029/778, C01B031/02, H01L051/05, H01L051/30, H01L051/40, H01L021/336, C01B032/15, C01B032/18, C01B032/182, H01L021/28
  • 专利详细信息:   US2011089995-A1 21 Apr 2011 H03K-003/01 201129 Pages: 10 English
  • 申请详细信息:   US2011089995-A1 US805933 25 Aug 2010
  • 优先权号:   KR098778

▎ 摘　　要

NOVELTY - The device has an embedded gate formed on a substrate (20), and an upper oxide layer (28) formed on the embedded gate. The graphene channel (30) and several electrodes (32,34) are formed on the upper oxide layer. The channel is formed on several electrodes. The channel is formed away from the upper oxide layer. USE - Graphene device e.g. graphene-based inverter (claimed). ADVANTAGE - Since gate electrodes are formed before forming the graphene channel, manufacturing process which facilitates the operation control is simplified. Since metal patterns are embedded in the interlayer insulating layer before the formation of the channel, change of properties of graphene is reduced or prevented. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method of manufacturing graphene device; and (2) method of operating graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view explaining the manufacturing process of graphene device. Substrate (20) Lower oxide layer (22) Upper oxide layer (28) Graphene channel (30) Electrodes (32,34)