• 专利标题:   Preparation method for single crystal graphene structure, has annealing copper foil at constant temperature, and reducing temperature of copper foil to room temperature.
  • 专利号:   CN105386124-A, CN105386124-B
  • 发明人:   LIN L, LIU Z, PENG H, SUN L
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C25F003/22, C30B025/18, C30B029/02, C30B029/64
  • 专利详细信息:   CN105386124-A 09 Mar 2016 C30B-029/02 201637 Pages: 14 English
  • 申请详细信息:   CN105386124-A CN10931329 15 Dec 2015
  • 优先权号:   CN10931329

▎ 摘  要

NOVELTY - The method involves annealing the copper foil at the constant temperature. The temperature of the copper foil is reduced to room temperature. The one time growth and second time growth are performed with carbon source gas. The pressure of the carbon source gas is higher than the gas in one growth step of the growth atmosphere. USE - Preparation method for single crystal graphene structure used for electric application. ADVANTAGE - The preparation method is simplified. The graphene structure is produced with high quality. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating the fast growth of single crystal graphite.