▎ 摘　　要

NOVELTY - Vertical transistor device 100 comprises bottom source/drain region including first multiple layers of two-dimensional (2D) material. The first multiple layers of 2D material has respective periodic crystallographic pattern with respective rotational orientation about first reference axis of rotation relative to each adjacent layer of first multiple layers of 2D material. The top source/drain region comprises second multiple layers of 2D material. The top source/drain region is positioned vertically above portion of bottom source/drain region. The vertically oriented semiconductor structure 102 is positioned vertically between bottom source/drain region and top source/drain region. The vertically oriented semiconductor structure has vertical height and outer perimeter. The gate structure is positioned all around outer perimeter of vertically oriented semiconductor structure for portion of vertical height of vertically oriented semiconductor structure. USE - Vertical transistor device. ADVANTAGE - The vertical transistor device improves performance capabilities and electrical performance. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of vertical transistor device. Vertical transistor device (100) Semiconductor structure (102) Surface (102S) Two-dimensional material layers (104)