▎ 摘　　要

NOVELTY - Method for nitrogen doping in a chemical vapor deposition (CVD) graphene, involves initiating by a controller, and performing an annealing process using ammonia gas in a pressure chamber on the CVD graphene at a pre-defined temperature for a pre-defined period of time, where the pressure chamber is maintained at atmospheric pressure. USE - The method is used for nitrogen doping in CVD graphene. ADVANTAGE - None given. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a system for nitrogen doping in a chemical vapor deposition (CVD) graphene comprising a mass flow controller at an inlet of a pressure chamber for controlling flow of ammonia gas to the pressure chamber, a heater present in the pressure chamber on which the CVD graphene is placed, a pressure gauge for measuring the pressure in the pressure chamber, a vacuum pump at the outlet of the pressure chamber, and a controller configured for initiating an annealing process in the pressure chamber on the CVD graphene using ammonia gas at a pre-defined temperature for a pre-defined period of time, where the pressure chamber is maintained at atmospheric pressure.