▎ 摘　　要

NOVELTY - The structure has multiple graphene units stacked up and down. The graphene unit is a single-layer graphene sheet. The upper and lower two adjacent graphene units are weak coupling promoting thermal electron transition, increasing the electronic combined state density, so as to increase the number of high energy state hot electron. USE - Graphene structure based on weak coupling enhancement used in optoelectronic device. ADVANTAGE - The structure realizes superposition of light absorption of multi-layer graphene by weak coupling, and improves light absorption rate of the graphene film so as to accumulate in the low energy band and hot electron. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a method for preparing graphene-based photoelectric device, which involves firstly reserving aworking window on the semiconductor substrate, plating an insulating layer outside the working window, sputtering electrode layer in the insulating layer, paving the multilayer graphene film on the working window, and with the electrode layer, contact organicsolvent at the graphene film edge, where organic solvent penetrates from the graphene film edge to the innerpart, volatilizing the solvent, using the surface tensionof the solvent to realize the tight combination of thefilm and the semiconductor, obtaining an independent photoelectric device, using the lead and the electrode layer of the photoelectric device; and a method for enhancing the accumulation of thermion in the vertical transmission direction of graphene film, which involves increasing the number of non-AB structure of graphene film vertical transmission direction, increasing thermal electron transition probability by weak-coupling action of non-AB structure, adjusting the graphene vertical direction AB stacking structure, prolonging the thermal electron relaxation time and promoting generation and accumulation of the thermal electron in the high energy state area.