▎ 摘　　要

NOVELTY - Transfer of epitaxy-enabled substrate involves performing several selective-area epitaxy operations of a single crystalline material on a mask-patterned substrate (12), in which each of several selective-area epitaxy operations create repeating units (20) along a surface of the mask-patterned substrate containing discrete doping profiles on the mask-patterned substrate, epitaxially growing a transfer substrate on the repeating units, and separating the transfer substrate from the mask-patterned substrate. The repeating units comprise discrete doping profiles on the mask-patterned substrate transferred to the transfer substrate. USE - Transfer of epitaxy-enabled substrate in manufacture of article (claimed). Uses include but are not limited to gallium-nitride-based MOSFET, vertical junction field effect transistor, junction barrier Schottky diodes, super-junction MOSFETs, transistors, power electronics, sensors, p-gallium nitride. ADVANTAGE - The method enables transferring of epitaxy-enabled substrate with excellent voltage blocking capability and current-handling capability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the article. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional schematic view of ELOG of an array of gallium nitride islands via MOVPE with in-situ doping operations. Additional mask (10) Substrate (12) Repeating unit (20)