▎ 摘　　要

NOVELTY - A silicon carbide substrate is processed and washed for removing impurities from surface. A masking plate is prepared by isolation strip and ion-implantation strip, and width of isolation strip is controlled to 100-200 nm and width of ion-implantation strip is controlled to 50-200 nm. Carbon ions are injected into ion-implantation strip area of washed silicon carbide substrate. The substrate is heat-treated in an epitaxial furnace, and carbon membrane is formed on graphene nanoribbon. Then, membrane is separated from nanoribbon sample, to obtain graphene nanoribbon. USE - Preparation of graphene nanoribbon used in manufacture of microelectronic device. ADVANTAGE - The method safely and economically provides graphene nanoribbon with reduced silicon carbide pyrolysis temperature. DETAILED DESCRIPTION - A silicon carbide substrate is processed and washed for removing the impurities from surface. A masking plate is prepared by isolation strip and ion-implantation strip, and width of the isolation strip is controlled to 100-200 nm and width of the ion-implantation strip is controlled to 50-200 nm. Carbon ions having energy of 15-45 keV and dose of 5x 1014-5x 1016 is injected into the ion-implantation strip area of washed silicon carbide substrate. The substrate is placed in an epitaxial furnace, pressure in the epitaxial furnace is adjusted to 0.5-1x 10-6 Torr, heating to 1200-1300 degrees C, argon gas having flow speed of 500-800 mL/minute is supplied, temperature is maintained constant for 30-90 minutes, and ion-implantation area of substrate is pyrolyzed. The generated carbon film sample sheet is placed on a copper membrane, argon gas with flow speed of 30-150 mL/minute is supplied, annealed at 900-1200 degrees C for 10-20 minutes, and carbon membrane is formed on graphene nanoribbon. Then, the membrane is separated from nanoribbon sample, to obtain graphene nanoribbon.