▎ 摘　　要

NOVELTY - Forming vias and skip vias, comprises: forming a blocking layer on an underlying layer; forming an overlying layer on the blocking layer; opening a hole in the overlying layer that overlaps the blocking layer; and etching past the blocking layer into the underlying layer to form a second hole that is smaller than the hole in the overlying layer. The blocking layer is a conductive material comprising copper, cobalt, aluminum, gold, silver, tungsten, ruthenium, molybdenum, tantalum nitride, titanium nitride, tantalum carbide, titanium carbide, titanium aluminum, graphene and/or carbon nanotubes. USE - The method is useful for forming vias and skip vias. ADVANTAGE - The method: provides placement of the resist openings at the ends of the conductive lines formed by the second metallization layer sections that can save space by shortening the conductive line, while providing more precise control of via formation without relying on the via profile and chamfer height through the self-alignment of the trench edge with the sidewall of the underlying second metallization layer section; and allows reduced line design for smaller footprints by placing the vias at the ends of conductive lines. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device.