▎ 摘　　要

NOVELTY - Preparing graphene thin film involves providing graphene growth substrate and then placing the substrate in high temperature region. The high temperature region is formed by heating mechanism and then surface of the graphene film is deposited perpendicular to the surface normal direction of substrate. The graphene film is sequentially applied to accelerating electric field and magnetic field for screening, where the substrate is used as anode of accelerating electric field. The substrate magnetic field area and accelerating electric field area are heated. USE - Method for preparing graphene thin film (claimed). ADVANTAGE - The method enables to prepare graphene thin film with high quality and large size of single crystal of graphene efficiently. DETAILED DESCRIPTION - Preparing graphene thin film involves providing graphene growth substrate and then placing the substrate in high temperature region. The high temperature region is formed by heating mechanism and then surface of the graphene film is deposited perpendicular to the surface normal direction of substrate. The graphene film is sequentially applied to accelerating electric field and magnetic field for screening, where the substrate is used as anode of accelerating electric field. The substrate magnetic field area and accelerating electric field area are heated and then introduced into carbon-containing gas as carbon source, where the carbon-containing gas is ionized to obtain plasma before screening magnetic field region. The plasma is entered into screening magnetic field area to obtain jet flow, where amount of movement of radius of charged ions of jet is depend on different magnetic field screening effect. The carbon ions is filtered out into the accelerating field and then impact on the surface of the substrate is performed under the effect of acceleration of the electric field to obtain growth of graphene.