▎ 摘　　要

NOVELTY - Reduced graphene oxide coating on silicon based field effect transistors comprises: dispersing 1-2 mg, preferably 1.5 mg reduced graphene oxide in 1 ml water at 180W, 40 Hz in ultrasonic bath; limiting the area to be covered on the silicon based field effect transistors with aluminum band or mold made of soft material made of silicon derivatives that will not damage the structure of the silicon based field effect transistors; placing the flat plate made of flat polyvinyl chloride or polypropylene into the ultrasonic bath; putting silicon based field effect transistors on it; dropping 10 μ l mixture onto the surface to be coated; operating the system preferably at 180W, 40 Hz for 10-15 minutes; and after removing the solvent part, and keeping at 50° C, preferably 100° C for ≈ one minute. USE - The method is useful for reduced graphene oxide coating on silicon based field effect transistors (claimed), which is used in biomedical application areas e.g. chemical sensors, lithium-ion batteries for energy storage, and drug delivery system for connecting identifier (biomarker) structures. ADVANTAGE - The method: is cost-effective; provides durable coating that does not disappear from the surface of the material afterwards; prevent damage to the photoresist during reduced graphene oxide coating; and destroys chemical residues that do not harm the nature and occur during production.