• 专利标题:   Preparation of three-dimensional carbon nanotube/reduced graphene oxide heterojunction sensitive device for preparing gas sensor, by coating carbon nanotubes and graphene oxide on surface of magnetic spheres, and arranging heterojunctions.
  • 专利号:   CN111307884-A, CN111307884-B
  • 发明人:   SU Y, YE X, YU J
  • 专利权人:   NANJING JINGTAN NANOTECHNOLOGY CO LTD, NANJING MICRON ELECTRONICS IND RES INST
  • 国际专利分类:   B82Y015/00, C01B032/184, C01B032/198, G01N027/12
  • 专利详细信息:   CN111307884-A 19 Jun 2020 G01N-027/12 202057 Pages: 10 Chinese
  • 申请详细信息:   CN111307884-A CN10392076 11 May 2020
  • 优先权号:   CN10392076

▎ 摘  要

NOVELTY - Preparation of three-dimensional carbon nanotube/reduced graphene oxide heterojunction sensitive device involves: (S1) performing electrostatic self-assembly of heterojunctions by sequentially coating carbon nanotubes and graphene oxide on a surface of magnetic submicron spheres to form a three-dimensional magnetic carbon nanotube/reduced graphene oxide heterojunction; (S2) performing directional arrangement of heterojunctions by during the dripping process, using a magnetic field to control the heterojunctions to form directional arrangements between the electrodes to form a chain-like multi-conducting channel; and (S3) carrying out reduction treatment by reducing graphene oxide to complete the construction of a gas sensor device. USE - The method is useful for preparing three-dimensional carbon nanotube/reduced graphene oxide heterojunction sensitive device, which is useful for preparing gas sensors (claimed). ADVANTAGE - The method enables simple and large-scale industrial preparation of the three-dimensional carbon nanotube/reduced graphene oxide heterojunction sensitive device with low sensitivity and high uniformity, efficiency and stability. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) the three-dimensional carbon nanotube/reduced graphene oxide heterojunction sensitive device; and (2) use of the three-dimensional carbon nanotube/reduced graphene oxide heterojunction sensitive device for preparing gas sensors, which involves the step (S1)-(S3) as per above se, and finally welding and encapsulating the sensor device.