▎ 摘　　要

NOVELTY - Graphene is deposited on a metal surface of substrate (212) by providing a substrate in a reaction chamber (204), where the substrate includes a metal surface; flowing greater than or equal to 1 hydrocarbon precursors into reaction chamber and toward the substrate; generating, from a hydrogen source gas, radicals of hydrogen in a remote plasma source that is positioned upstream of greater than or equal to 1 hydrocarbon precursors; and introducing the radicals of hydrogen into the reaction chamber and toward the substrate, where the radicals of hydrogen react with greater than or equal to 1 hydrocarbon precursors to deposit graphene on the metal surface of the substrate. USE - Deposition of graphene on a metal surface of substrate. ADVANTAGE - Annealing the graphene on the metal surface of the substrate may occur at elevated temperatures to remove defects from graphene crystal structure and ensures formation of high-quality graphene. The high-quality graphene may be grown as a single layer, bilayer, or layer graphene film. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) apparatus for depositing graphene on a metal surface of a substrate (212) comprising reaction chamber (204); substrate support in the reaction chamber and configured to support a substrate, where the substrate includes a metal surface, a remote plasma source upstream of the reaction chamber, where the metal surface of the substrate faces towards the remote plasma source; greater than or equal to 1 gas outlets in the reaction chamber and downstream from the remote plasma source; and a controller configured with instructions for performing the following operations: flow greater than or equal to 1 hydrocarbon precursors through greater than or equal to 1 gas outlets into reaction chamber and toward the substrate, generate, from a hydrogen source gas, radicals of hydrogen in the remote plasma source, and introduce the radicals of hydrogen into the reaction chamber and towards the substrate, where the radicals of hydrogen react with greater than or equal to 1 hydrocarbon precursors to deposit graphene on the metal surface of the substrate; (2) semiconducting device comprising a semiconductor substrate having a temperature sensitive underlayer, where the temperature sensitive underlayer has a temperature sensitive limit; and graphene film deposited on the temperature sensitive underlayer; and (3) depositing graphene on metal surface of a substrate which involves providing a substrate in reaction chamber, where the substrate includes a metal surface; and depositing graphene on metal surface of the substrate, where the substrate is maintained at 200-400 degrees C during deposition. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the plasma processing apparatus with a remote plasma source. Plasma processing apparatus (200) Remote plasma source (202) Reaction chamber (204) Showerhead (206) Substrate (212)