• 专利标题:   Epitaxial structure comprises substrate having epitaxial growth surface, first epitaxial layer on epitaxial growth surface, graphene layer on first epitaxial layer and second epitaxial layer on first epitaxial layer.
  • 专利号:   US2013285115-A1, CN103378239-A, TW201344946-A, US9231060-B2, CN103378239-B, TW560901-B1
  • 发明人:   WEI Y, FAN S
  • 专利权人:   HON HAI PRECISION IND CO LTD, UNIV TSINGHUA, HONGFUJIN PRECISION IND SHENZHEN CO LTD, UNIV TSINGHUA, HON HAI PRECISION IND CO LTD
  • 国际专利分类:   H01L029/267, H01L021/02, H01L033/00, H01L033/02, H01L033/12, H01L029/16
  • 专利详细信息:   US2013285115-A1 31 Oct 2013 H01L-029/267 201373 Pages: 22 English
  • 申请详细信息:   US2013285115-A1 US713567 13 Dec 2012
  • 优先权号:   CN10122545

▎ 摘  要

NOVELTY - Epitaxial structure (10) comprises either: (a) a substrate (100) having epitaxial growth surface (101), first epitaxial layer (110) on epitaxial growth surface, graphene layer (120) on first epitaxial layer and second epitaxial layer on first epitaxial layer and covering graphene layer; or (b) the substrate, first graphene layer, patterned graphene layer and second epitaxial layer sequentially stacked on the epitaxial growth surface, where patterned graphene layer is sandwiched between the epitaxial layers and defines many apertures passing through it along direction of thickness. USE - Used as epitaxial structure. ADVANTAGE - The substrate is a patterned structure having many grooves in micrometer scale, so the dislocation during the growth will be reduced. The graphene layer is a patterned structure, and the thickness and aperture is in nanometer scale, thus the dislocation is further reduced and the quality of the epitaxial layer is improved. Due to the existence of the graphene layer, the contact surface between the epitaxial layer and the substrate will be reduced, and the stress between them is reduced, thus the substrate is utilized to grow thicker epitaxial layer. The graphene layer is a freestanding structure, thus directly placed on the substrate by utilizing simple method at low cost. The epitaxial layer grown on the substrate has less dislocation, thus producing electronics that exhibit high performance. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of flowchart for making the epitaxial structure. Epitaxial structure (10) Substrate (100) Epitaxial growth surface (101) First epitaxial layer (110) Graphene layer (120)