• 专利标题:   Flexible inorganic optoelectronic device structure, has lower organic protective layer, silicon film layer, patterned metal doped film layer, graphene layer, gallium nitride microcolumn array and silicon dioxide protective layer.
  • 专利号:   CN110323312-A
  • 发明人:   YAN H, TIAN Z, LUO Q, JIANG W, LI P, LI H, HE X
  • 专利权人:   UNIV WUHAN TECHNOLOGY
  • 国际专利分类:   H01L033/00, H01L033/20, H01L033/32, H01L033/46
  • 专利详细信息:   CN110323312-A 11 Oct 2019 H01L-033/20 201985 Pages: 19 Chinese
  • 申请详细信息:   CN110323312-A CN10530501 19 Jun 2019
  • 优先权号:   CN10530501

▎ 摘  要

NOVELTY - A flexible inorganic optoelectronic device structure has lower organic protective layer, silicon film layer, patterned metal doped film layer, graphene layer, gallium nitride microcolumn array, silicon dioxide protective layer, metal aluminum reflective film layer, metal doped film layer and upper organic protective layer from bottom to top. USE - Flexible inorganic optoelectronic device structure. ADVANTAGE - The flexible inorganic optoelectronic device structure has high photoelectric efficiency and long service life, is prepared in a highly efficient manner at low cost and not folded and brittle and does not undergo performance degradation problems under UV irradiation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing the flexible inorganic optoelectronic device structure.