▎ 摘　　要

NOVELTY - Preparation of high quality graphene/two-dimensional metal carbide crystal vertical heterostructure material comprises using bimetal laminate of upper copper foil or underlying metal foil as growth substrate, performing chemical vapor deposition on graphene at 600-1083 degrees C, heating at 1085-1300 degrees C, growing two-dimensional transition metal carbide crystal under graphene and etching copper substrate. USE - Method of preparing high quality graphene or two-dimensional metal carbide crystal vertical heterostructure material. ADVANTAGE - The material has high transparent Josephson junction.