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  • 专利标题:   Semiconductor structure for semiconductor device, has substrate, graphene layer and double layer gate dielectric having alternate lamination of silicon nitride layer and hafnium oxide layer.
  • 专利号:   DE102012222116-A1, GB2499311-A, US2013207080-A1, CN103247679-A, US8680511-B2, GB2499311-B, DE102012222116-B4, CN103247679-B
  • 发明人:   DIMITRAKOPOULOS C D, FARMER D B, GRILL A, LIN Y, NEUMAYER D A, PFEIFFER D, ZHU W, DIMITRAKOPOULOS C
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L021/20, H01L029/16, H01L029/786, B82Y040/00, H01L021/02, H01L029/66, H01L021/336, H01L029/775, H01L021/285, H01L029/10, H01L029/51, H01L029/78, H01L029/06, B82Y030/00
  • 专利详细信息:   DE102012222116-A1 14 Aug 2013 H01L-029/786 201355 Pages: 22 German
  • 申请详细信息:   DE102012222116-A1 DE10222116 04 Dec 2012
  • 优先权号:   US369901

▎ 摘　　要

NOVELTY - A semiconductor structure has a graphene layer formed on the upper surface (12) of a substrate (10), and double layer gate dielectric formed on the surface of graphene layer. The double layer gate dielectric has alternate lamination of silicon nitride layer and hafnium oxide layer. USE - Semiconductor structure is used for semiconductor device (claimed) for personal electronic device e.g. mobile telephone and personal computer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) semiconductor device; and (2) formation of semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of semiconductor structure. Substrate (10) Upper surface (12)