• 专利标题:   Method for patterning graphene using laser, involves coating graphene oxide as a film on a substrate, where the transparent film is laminated on the graphene oxide and the laser is irradiated on a ring element.
  • 专利号:   KR2014142382-A
  • 发明人:   TAE H L, EAH H B, JAE D N, JOON S O, TAE S H
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B23K026/00, H01L021/027
  • 专利详细信息:   KR2014142382-A 12 Dec 2014 H01L-021/027 201515 Pages: 15
  • 申请详细信息:   KR2014142382-A KR061714 30 May 2013
  • 优先权号:   KR061714

▎ 摘  要

NOVELTY - The method involves coating graphene oxide film (20) on a substrate (10). The transparent film is laminated on the graphene oxide and the laser (40) is irradiated on a ring element. The patterning of the graphene oxide is used, where the laser is irradiated in the transparent film direction. The transparent film is removed after the laser irradiation and the graphene pattern is reduced in the transparent film. The transparent film is provided with a polyethylene terephthalate film (30). USE - Method for patterning graphene using laser. ADVANTAGE - The patterning of the graphene oxide is used, where the laser is irradiated in the transparent film direction, and thus enables to implement the graphene circuit of excellent quality without additional patterning process and reduction process. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene substrate. Substrate (10) Graphene oxide film (20) Polyethylene terephthalate film (30) Laser (40)