▎ 摘　　要

NOVELTY - The method involves forming a convex dielectric fin over a substrate, and forming a channel layer on an upper surface of dielectric fin along the side wall of dielectric fin. A gate structure is formed above the channel layer, and a metal source/drain region is formed on an opposite side of the gate material. A channel enhancement layer is formed over the channel layer, and a passivation layer is formed above the gate structure, the metal source/drain region and the channel enhancement layer. The low-dimensional material comprises a two-dimensional semiconductor material, carbon nano-tube or graphene nano-belt. The two-dimensional semiconductor material comprises Molybdenum disulfide (MoS2), Tungsten disulfide (WS2) or Tungsten diselenide (WSe2). USE - The method is useful for forming fin-type field effect transistor device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a fin-type field effect transistor device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for forming fin-type field effect transistor device (Drawing includes non-English language text).