• 专利标题:   Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.
  • 专利号:   US2020140279-A1, KR2020052125-A
  • 发明人:   SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   US2020140279-A1 07 May 2020 C01B-032/186 202040 Pages: 14 English
  • 申请详细信息:   US2020140279-A1 US675350 06 Nov 2019
  • 优先权号:   KR135330

▎ 摘  要

NOVELTY - Graphene formation involves forming a carbon monolayer on a substrate (10) by injecting a reaction gas into a reaction chamber, where the former reaction gas comprises a source being a carbon source and including a component that belongs to an electron withdrawing group. Another reaction gas including another source is injected into the reaction chamber, where the latter source includes a functional group that forms a volatile structure by reacting with the component that belongs to an electron withdrawing group. The graphene is directly grown on a surface of the substrate by repeatedly injecting the former reaction gas and the second reaction gas. USE - Method of forming graphene. ADVANTAGE - The method of forming graphene has high chemical stability and a wide surface area, and shows having a hexagonal honeycomb structure in which carbon atoms are two dimensionally connected, and has a very small thickness as thin as a level of an atom size. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the method for forming graphene. Substrate (10)