▎ 摘　　要

NOVELTY - The method involves arranging a graphene electrode layer on a structure. A graphene thin film is arranged on the structure. A plating layer is arranged on a surface of the graphene thin film. Metal contacts are arranged on a surface of the graphene electrode layer. Two nitride base cermets semiconductor layers are arranged with the structure. An active layer is arranged between the nitride base cermets semiconductor layers. The cermets semiconductor layers are processed at temperature 300-700 degrees Celsius during thermal process. USE - Method for manufacturing an LED. ADVANTAGE - The method enables improving electrical characteristic and optical characteristic of the LED in an easy manner. DETAILED DESCRIPTION - The graphene electrode layer is made of nickel, platinum, gold, copper, palladium, Rhodium, chromium, titanium, aluminum or silver. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for manufacturing an LED.