▎ 摘　　要

NOVELTY - Preparing sulfur doped graphene using chemical vapor deposition method comprises providing a metal substrate, placing it in the chemical vapor deposition reaction chamber, introducing inert gas in reaction chamber vent and carrying out aeration and exhaust gas treatment, introducing hydrogen gas in reaction chamber, at first temperature, reducing metal substrate surface oxide, at second temperature, introducing the carbon source gas and the sulfur source gas into a reaction furnace, reacting, forming sulfur doped graphene on a metal substrate surface, and cooling reaction chamber. USE - The method is useful for preparing sulfur doped graphene using chemical vapor deposition method (claimed). ADVANTAGE - The method is economical, is suitable for large scale production of sulfur doped graphene, and can achieve controlled doping. DETAILED DESCRIPTION - Preparing sulfur doped graphene using chemical vapor deposition method, comprises (i) providing a metal substrate, placing the metal substrate in the chemical vapor deposition reaction chamber, (ii) introducing inert gas in reaction chamber vent and carrying out aeration and exhaust gas treatment, (iii) introducing hydrogen gas in reaction chamber, at first temperature, reducing metal substrate surface oxide, (iv) at second temperature, introducing the carbon source gas and the sulfur source gas into a reaction furnace, reacting, forming sulfur doped graphene on a metal substrate surface, and (v) cooling reaction chamber under hydrogen and inert gas atmosphere. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the sulfur doped graphene preparing chemical vapor deposition reaction furnace (Drawing includes non-English language text).