▎ 摘　　要

NOVELTY - Manufacture of three-dimensional heterogeneous module involves forming through-silicon via (TSV) hole on lower surface of heat dissipation adapter plate, depositing silicon oxide or silicon nitride on lower surface of the heat dissipation adapter plate, or directly thermally oxidizing to form an insulating layer, producing a seed layer on insulating layer, coating graphene paint on opening surface of TSV hole, temporarily bonding surface of the graphene layer with temporary carrier and the heat dissipation adapter plate, depositing silicon oxide or silicon nitride on the front side of the heat dissipation adapter plate, or directly thermally oxidizing to form passivation layer covering, exposing the metal pillars, obtaining micro bumps on surface of heat-generating chip, bonding heat-generating chip on lower surface of the heat dissipation adapter plate through hot-press bonding, and directly contacting bottom of the chip with graphene coating on heat dissipation transfer board. USE - Manufacture of three-dimensional heterogeneous module. ADVANTAGE - The method enables manufacture of three-dimensional heterogeneous module using graphene as heat-dissipating coating which quickly conducts heat of heating portion of surface to entire surface to avoid problem of local overheating of the chip. DETAILED DESCRIPTION - Manufacture of three-dimensional heterogeneous module involves forming through-silicon via (TSV) hole on lower surface of heat dissipation adapter plate through photolithography and etching process, depositing silicon oxide or silicon nitride on lower surface of the heat dissipation adapter plate, or directly thermally oxidizing to form an insulating layer, producing a seed layer on insulating layer through physical sputtering, magnetron sputtering or evaporation process, filling the hole with electroplating metal to form a metal pillar, densifying the metal at 200-500 degrees C, removing metal on lower surface of the plate by chemical-mechanical polishing, coating graphene paint on opening surface of TSV hole by spin coating, removing graphene coating which covers the metal pillars by photolithography and etching processes e.g. dry etching, wet etching and/or electron beam etching, temporarily bonding surface of the graphene layer with temporary carrier and the heat dissipation adapter plate, thinning by front surface of the heat dissipation adapter plate by grinding process, such that the bottom of the metal pillar is exposed, depositing silicon oxide or silicon nitride on the front side of the heat dissipation adapter plate, or directly thermally oxidizing to form passivation layer covering, exposing the metal pillars, removing temporary carrier, obtaining micro bumps on surface of heat-generating chip, bonding heat-generating chip on lower surface of the heat dissipation adapter plate through hot-press bonding, and directly contacting bottom of the chip with graphene coating on heat dissipation transfer board.