▎ 摘　　要

NOVELTY - A substrate (1) has graphene layer (4) formed by chemical vapor deposition using a metal catalyst, compound or alloying layer (5) and oxide layer (2) for diffusing metal catalyst sequentially formed on a semiconductor layer or metal layer. USE - Substrate is used for fabrication of semiconductor element (claimed) e.g. complementary metal oxide-type semiconductor for electronic device, optoelectronic device and spintronic device. ADVANTAGE - The substrate has high quality, electronic properties and large area. The semiconductor element fabricated using the substrate has increased speed, reliability, reduced power consumption and integrity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of substrate; and (2) fabrication of semiconductor element. DESCRIPTION OF DRAWING(S) - The drawing shows the perspective view of substrate. Substrate (1) Oxide layer (2) Graphene layer (4) Graphene substrate (4A) Compound and alloying layer (5)