• 专利标题:   Device used for producing graphene films, comprises a graphene layer provided over a concave or convex region of a substrate and planar region of the substrate, concave or convex region and the planar region provided adjacent to each other.
  • 专利号:   US2020083454-A1, US10756271-B2
  • 发明人:   CHEN M, PAN S C, HSIEH C
  • 专利权人:   TAIWAN SEMICONDUCTOR MFG CO LTD, UNIV TAIWAN NAT, TAIWAN SEMICONDUCTOR MFG CO LTD, UNIV TAIWAN NAT
  • 国际专利分类:   H01L021/02, H01L029/06, H01L029/16, H01L029/66, H01L051/00, H01L029/76, H01L051/05
  • 专利详细信息:   US2020083454-A1 12 Mar 2020 H01L-051/00 202026 Pages: 22 English
  • 申请详细信息:   US2020083454-A1 US665443 28 Oct 2019
  • 优先权号:   US169557, US665443

▎ 摘  要

NOVELTY - The device (2200) comprises a graphene layer (2502) provided over a concave or convex region of a substrate (2102) and a planar region of the substrate. The concave or convex region and the planar region provided adjacent to each other. The graphene layer is curved within the concave or convex region. The graphene layer is substantially planar within the planar region. A metal electrode in contact with the graphene layer within the planar region. The substrate includes an insulating substrate. The insulating substrate includes one of quartz, glass, ceramic, sapphire, and silicon carbide (SiC). The concave or convex region of the substrate includes a concave region. USE - Device used for producing graphene films. ADVANTAGE - Device provides the formation of high-quality, large-area graphene over any type of surface topography and/or surface structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a curved graphene structure. Substrate (2102) Device (2200) Convex Curved Region (2205) Graphene layer (2502) Source/drain Electrodes (2702)