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  • 专利标题:   Graphene electronic device e.g. field effect transistors, has graphene channel layer which is formed on gate insulating layer and source and drain electrodes are located on graphene channel layer.
  • 专利号:   US2012132893-A1, CN102479804-A, JP2012119665-A, KR2012059022-A, US9093509-B2, JP5967894-B2, CN102479804-B, KR1715355-B1
  • 发明人:   HEO J, SEO S, LEE S, CHUNG H, YANG H, SEO S A, JUNG H, HUH J, HEO J S, LEE S H, CHUNG H J, YANG H J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B82Y099/00, H01L029/16, H01L029/78, H01L029/10, B82Y030/00, H01L029/06, H01L029/786, H01L051/05, H01L051/30, H01L021/336, H01L029/778
  • 专利详细信息:   US2012132893-A1 31 May 2012 H01L-029/16 201244 Pages: 9 English
  • 申请详细信息:   US2012132893-A1 US242177 23 Sep 2011
  • 优先权号:   KR120614

▎ 摘　　要

NOVELTY - The graphene electronic device (100) includes a gate electrode and a gate insulating layer (120) which is located on the gate electrode. A graphene channel layer (130) is formed on the gate insulating layer and a source and drain electrodes (142, 144) are located on the graphene channel layer. The graphene channel layer includes several nanoholes (132). USE - Graphene electronic device e.g. field effect transistors and/or radio frequency (RF) transistors. ADVANTAGE - The width of the graphene channel layer can be relatively large and/or increased so that the reduction of performance of the graphene channel layer due to a graphene patterning process is prevented effectively and the mobility of the graphene channel layer is increased. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the graphene electronic device. Graphene electronic device (100) Gate insulating layer (120) Graphene channel layer (130) Nanoholes (132) Source and drain electrodes (142,144)