▎ 摘 要
NOVELTY - Substrate processing apparatus comprises substrate support configured to support many substrates such that multiple substrates are on the substrate support, a chamber sidewall surrounding a side surface of the substrate support, and an upper plate comprising many plate portions on the substrate support and spaced apart from the substrate support USE - Substrate processing apparatus used for manufacturing a semiconductor device (claimed). ADVANTAGE - The substrate processing apparatus comprises a substrate support that is configured to support multiple substrates, where chamber sidewall is provided for surrounding a side surface of the substrate support and an upper plate is provided with multiple plate portions, which enables to form a high-quality graphene layer on the semiconductor device in easy manner. DETAILED DESCRIPTION - Substrate processing apparatus comprises substrate support configured to support many substrates such that multiple substrates are on the substrate support, a chamber sidewall surrounding a side surface of the substrate support, and an upper plate comprising many plate portions on the substrate support and spaced apart from the substrate support, where multiple plate portions and the substrate support collectively partially define many process regions between multiple plate portions and the substrate support, and multiple plate portions and the substrate support collectively partially define a separation region between two process regions of many process regions, where multiple plate portions have a first pre-treatment process plate portion and a first deposition process plate portion, multiple plate portions and the substrate support collectively partially define many process regions to include a first pre-treatment process region between the first pre-treatment process plate portion and the substrate support, the first pre-treatment process region having a first height, and a first deposition process region between the first deposition process plate portion and the substrate support, the first deposition process region having a second height, the second height greater than the first height, the first pre-treatment process plate portion comprises a pre-treatment process gas nozzle configured to inject a pre-treatment process gas to pre-treat a first substrate of multiple substrates on the substrate support in the first pre-treatment process region, and the first deposition process plate portion comprises a first deposition process gas nozzle configured to inject a deposition process gas to deposit a material layer on a second substrate of multiple substrates on the substrate support in the first deposition process region. An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor device (200), which involves: (a) preparing a substrate processing apparatus comprising annealing process region, one pre-treatment process region having a first height, and deposition process region having a second height, the second height greater than the first height; (b) loading many substrates onto a substrate support in the substrate processing apparatus; (c) forming a material layer on each of multiple substrates while moving respective positions of many substrates in the substrate processing apparatus; and (d) unloading multiple substrates on each of which the material layer is formed from the substrate processing apparatus, where step of forming of the material layer on each of many substrates involves heat-treating one first substrate of the multiple substrates in the annealing process region to form a heat-treated one first substrate, moving the heat-treated one first substrate to the one pre-treatment process region, pre-treating the heat-treated one first substrate in the pre-treatment process region to form a pre-treated one first substrate, moving the pre-treated one first substrate to the one deposition process region, and forming the material layer on the pre-treated first substrate in the deposition process region to form one first substrate on which the material layer is formed. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the semiconductor device. 200Semiconductor device 205First material layer 210Substrate 240Second material layer 250Third material layer 260Pattern structures