• 专利标题:   Graphene adjustable low-pass filter, has graphite strip fixed on medium layer, and substrate made of silicon dioxide, where medium layer is made of silicon dioxide and length of dielectric layer is specific value.
  • 专利号:   CN208298983-U
  • 发明人:   HU M
  • 专利权人:   UNIV CHINA JILIANG
  • 国际专利分类:   H01P001/20
  • 专利详细信息:   CN208298983-U 28 Dec 2018 H01P-001/20 201908 Pages: 5 Chinese
  • 申请详细信息:   CN208298983-U CN20431924 28 Mar 2018
  • 优先权号:   CN20431924

▎ 摘  要

NOVELTY - The utility model claims a graphene adjustable low-pass filter. It comprises a substrate, polysilicon, dielectric layer, graphene strip; upper layer of the base layer is provided with silicon group, silicon group are completely the same is composed of seven geometrical shape and size of the rectangular polysilicon are arranged in turn, polysilicon layer, the upper surface of the upper layer is the dielectric geometric central graphene strip is located on the medium layer. adjusting a graphene layer by adding the bias voltage of Fermi level, to achieve the tuning of the tera-hertz wave. The utility model has good filtering performance, low insertion loss, novel structure, convenient integration and so on.