• 专利标题:   Two-dimensional metal layer reduced graphene electrode contact resistance method, involves providing graphite with dilute sample, performing physical gas phase deposition process, and forming two-dimensional graphene with metal structure.
  • 专利号:   CN104157561-A, CN104157561-B
  • 发明人:   SUN Q, YANG S, ZHOU P, ZHANG W
  • 专利权人:   UNIV FUDAN
  • 国际专利分类:   H01L021/28, H01L021/285
  • 专利详细信息:   CN104157561-A 19 Nov 2014 H01L-021/28 201505 Pages: 7 Chinese
  • 申请详细信息:   CN104157561-A CN10389035 08 Aug 2014
  • 优先权号:   CN10389035

▎ 摘  要

NOVELTY - The method involves providing graphite with dilute sample. Physical gas phase deposition process is performed. An UV photoelectron spectroscopy is provided with a graphite contact through a two-dimensional metal layer, where the two-dimensional metal layer material contains nickel, titanium, aluminum and palladium. Optimal thickness of the two-dimensional metal layer is detected. A depositing metal of the physical gas phase deposition process is determined, where thickness of the depositing metal ranges from 20-200 nm. Two-dimensional graphene is formed with a metal structure. USE - Two-dimensional metal layer graphene electrode contact resistance reducing method. ADVANTAGE - The method enables increasing property of graphene device and ensuring simple and convenient operation. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a two-dimensional metal layer reduced graphene electrode contact resistance method.'(Drawing includes non-English language text)'