• 专利标题:   Preparation of nitrogen doped three-dimensional porous graphene for lithium ion battery cathode material, involves immersing product containing tetracarboxylic copper phthalocyanine or copper amino acid in etching solution and treating.
  • 专利号:   CN105810945-A
  • 发明人:   MA X, WANG Z, YANG T, ZHOU J
  • 专利权人:   JIANGSU SHENSU ELECTRONIC TECHNOLOGY CO
  • 国际专利分类:   C01B031/04, H01M010/0525, H01M004/1393, H01M004/583
  • 专利详细信息:   CN105810945-A 27 Jul 2016 H01M-004/583 201666 Pages: 7 Chinese
  • 申请详细信息:   CN105810945-A CN10365129 26 May 2016
  • 优先权号:   CN10365129

▎ 摘  要

NOVELTY - Preparation of nitrogen doped three-dimensional porous graphene cathode material, involves placing tetracarboxylic copper phthalocyanine or copper amino acid in tube furnace of room temperature zone, passing shielding gas into furnace, placing tetracarboxylic copper phthalocyanine or copper amino acid in tube furnace of constant temperature zone, and heating, to obtain a product (I), cooling the product (I), immersing product (II) in the etching solution, and removing copper in the product, to obtain product (III), and treating the product (III), to obtain graphene. USE - Preparation of nitrogen doped three-dimensional porous graphene for lithium ion battery cathode material. ADVANTAGE - The preparation process is simplified and the production cost is reduced. The production efficiency is increased and the nitrogen doped three-dimensional porous graphene is obtained with high specific surface area and excellent electrical conductivity. DETAILED DESCRIPTION - Preparation of nitrogen doped three-dimensional porous graphene, involves placing tetracarboxylic copper phthalocyanine or copper amino acid in a tube furnace of room temperature zone, passing shielding gas into furnace at flow rate of 50-200 sccm, pre-heating tube furnace at 750-1100 degrees C, placing tetracarboxylic copper phthalocyanine or copper amino acid in tube furnace of constant temperature zone, passing shielding gas into tube furnace at flow rate of 50-200 sccm, and heating for 20-150 minutes, to obtain a product (I), cooling the product (I) and adjusting the flow rate of gas to 10-50 sccm, to obtain product (II), immersing product (II) in the etching solution, and removing copper in the product, to obtain product (III), and treating the product (III), to obtain nitrogen doped three-dimensional porous graphene.