▎ 摘　　要

NOVELTY - The utility model claims a gallium nitride based optoelectronic device epitaxial structure having a graphene layer, comprising a substrate, superposed on the substrate disposing a nitride buffer layer, an unintentional doped gallium nitride layer and first N type gallium nitride layer; and an active layer, a P type gallium nitride layer, an ITO conductive layer and a P electrode are superposed on the first N-type gallium nitride layer one side surface; the other side surface of the first N-type gallium nitride layer is provided with N electrode and P electrode; between the unintentional doped gallium nitride layer and the first N-type gallium nitride layer is further set with the graphene layer; graphene electronic transverse conducting in the first N-type gallium nitride, the conventional gallium nitride-based diode in N type nitride gallium layer, current blocking problem of the blockage, and compared with the traditional way the graphene on a substrate, which is more suitable for matching with the existing large patterned substrate technology.