▎ 摘　　要

NOVELTY - Manufacture of nitrogen-doped graphene film involves forming the nitrogen-doped graphene film on a base by irradiating the base with plasma comprising hydrocarbon, nitrogen, water, and oxygen. The partial pressure of water contained in the plasma is 0.015 or less with respect to total pressure of the plasma. The partial pressure of oxygen contained in the plasma is 0.002 or less with respect to total pressure of the plasma. USE - Manufacture of nitrogen-doped graphene film used as conductive film for transparent electrode of electronic device. ADVANTAGE - The method enables efficient manufacture of nitrogen-doped graphene film with large area, while controlling position of substitution of nitrogen atoms.