• 专利标题:   Growing a one or two monolayer film of graphene on a substrate, comprises depositing a first layer of graphene on the substrate, and annealing the carbon layer to form an ordered graphene layer one or two monolayers thick on the substrate.
  • 专利号:   WO2012174040-A1, EP2720809-A1, KR2014089311-A, EP2720809-A4
  • 发明人:   KELBER J
  • 专利权人:   UNIV NORTH TEXAS, UNIV NORTH TEXAS
  • 国际专利分类:   B05D005/12, C01B031/02, C30B029/36, C01B031/04
  • 专利详细信息:   WO2012174040-A1 20 Dec 2012 B05D-005/12 201303 Pages: 26 English
  • 申请详细信息:   WO2012174040-A1 WOUS042140 13 Jun 2012
  • 优先权号:   US497971P, KR734920

▎ 摘  要

NOVELTY - Growing a one or two monolayer film of graphene on a substrate, comprises: depositing a first layer of graphene on the substrate by physical vapor deposition to form a carbon layer on the substrate, and annealing the carbon layer to form an ordered graphene layer one or two monolayers thick on the substrate, where the further deposition and annealing of carbon on the graphene does not result in the formation of additional graphene layers. USE - The method is useful for growing a one or two monolayer film of graphene on a substrate. ADVANTAGE - The method can be carried out in a simple and cost-effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a composition of matter comprising a substrate on which is formed a film of one or two monolayer graphene exhibiting a band gap of at least 0.5 eV.