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  • 专利标题:   Method for increasing size of graphene domain, involves using plasma to simultaneously clean and oxidize surface of copper substrate and preparing graphene wafer by chemical vapor deposition on surface of treated copper substrate.
  • 专利号:   CN110438470-A
  • 发明人:   ZHANG R, HE L, XU Z, LI N, MU R
  • 专利权人:   AECC BEIJING AERONAUTICAL MATERIALS
  • 国际专利分类:   C23C016/02, C23C016/26
  • 专利详细信息:   CN110438470-A 12 Nov 2019 C23C-016/26 201993 Pages: 8 Chinese
  • 申请详细信息:   CN110438470-A CN10665045 22 Jul 2019
  • 优先权号:   CN10665045

▎ 摘　　要

NOVELTY - Method for increasing the size of a graphene domain, involves using a plasma to simultaneously clean and oxidize the surface of the copper substrate and preparing a graphene wafer by chemical vapor deposition on the surface of the treated copper substrate. USE - Method for increasing size of graphene domain. ADVANTAGE - The method is simple, easy, effectively explores the cleanliness and oxidation degree of the copper substrate on the crystallite size of the graphene and improves the quality of graphene film.